l2sa2029qm3t5g sot ?723 leshan radio company, ltd. l2sa2029rm3t5g collector 3 1 base 2 emitter device package shipping ordering information ? 723 (pb ? free) 8000/tape & reel sot ? 723 marking diagram 1 2 3 xxm xx = specific device code ( f q = l2sa2029 q m3t5g fr = l2sa2029rm3t5g) m = date code pnp silicon general purpose amplifier transistor this pnp transistor is designed for general purpose amplifier applications. this device is housed in the sot ? 723 package which is designed for low power surface mount applications, where board space is at a premium. ? reduces board space ? high h fe , 210 ? 460 (typical) ? low v ce(sat) , < 0.5 v ? esd performance: human body model; 2000 v, machine model; 200 v ? available in 4 mm, 8000 unit tape & reel ? this is a pb ? free device maximum ratings (t a = 25 c) rating symbol value unit collector ? base voltage v (br)cbo ? 60 vdc collector ? emitter voltage v (br)ceo ? 50 vdc emitter ? base voltage v (br)ebo ? 6.0 vdc collector current ? continuous i c ? 100 madc thermal characteristics rating symbol max unit power dissipation (note 1) p d 265 mw junction temperature t j 150 c storage temperature range t stg ? 55 ~ + 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a fr ? 4 glass epoxy printed ci rcuit board using the minimum recommended footprint. l2sa2029 q m3t5g sot 1 2 3 rev.o 1/5
leshan radio company, ltd. electrical characteristics (t a = 25 c) characteristic symbol min typ max unit collector ? base breakdown voltage (i c = ? 50 adc, i e = 0) v (br)cbo ? 60 ? ? vdc collector ? emitter breakdown voltage (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 50 ? ? vdc emitter ? base breakdown voltage (i e = ? 50 adc, i e = 0) v (br)ebo ? 6.0 ? ? vdc collector ? base cutoff current (v cb = ? 30 vdc, i e = 0) i cbo ? ? ? 0.5 na emitter ? base cutoff current (v eb = ? 7.0 vdc, i b = 0) i ebo ? ? ? 0.1 a collector ? emitter saturation voltage (note 2) (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? 0.5 vdc dc current gain (note 2) (v ce = ? 6.0 vdc, i c = ? 1.0 madc) h fe 120 ? 560 ? transition frequency (v ce = ? 12 vdc, i c = ? 2.0 madc, f = 30 mhz) f t ? 140 ? mhz output capacitance (v cb = ? 12 vdc, i e = 0 adc, f = 1.0 mhz) c ob ? 3.5 ? pf 2. pulse test: pulse width 300 s, duty cycle 2%. h fe values are classified as follows: qr hfe 120~270 180~390 * l2sa2029qm3t5g,l2sa2029rm3t5g rev.o 2/5
leshan radio company, ltd. typical electrical characteristics figure 1. collector ? emitter saturation voltage vs. collector current 1 0.1 0.01 0.1 1.0 10 100 1000 i c , collector current (ma) v ce , collector ? emitter saturation voltage (v) t a = 150 c t a = 25 c t a = ? 55 c i c /i b = 10 figure 2. base ? emitter saturation voltage vs. collector current 1.2 0.1 1.0 10 100 1000 i c , collector current (ma) v ce(sat) , base ? emitter saturation voltage (v) 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 t a = ? 55 c i c /i b = 10 t a = 25 c t a = 150 c figure 3. dc current gain vs. collector current 1000 i c , collector current (ma) h fe , dc current gain t a = 150 c t a = 25 c t a = ? 55 c v ce = 6 v 0.1 1.0 10 100 1000 figure 4. saturation region 2.0 i b , base current (ma) v ce(sat) , collector ? emitter saturation voltage (v) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.0 10 100 0.01 i c = 100 ma i c = 50 ma i c = 30 ma i c = 10 ma t a = 25 c figure 5. base ? emitter turn ? on voltage vs. collector current 0.1 1.0 10 100 1000 i c , collector current (ma) v be(on) , base ? emitter on voltage (v) t a = 150 c t a = 25 c t a = ? 55 c v ce = 2 v 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 figure 6. capacitance 100 v r , reverse voltage (v) c, capacitance (pf) 0.1 1.0 10 100 10 1 c ibo c obo 100 10 l2sa2029qm3t5g,l2sa2029rm3t5g rev.o 3/5
leshan radio company, ltd. typical electrical characteristics figure 7. current gain bandwidth product vs. collector current 1000 i c , collector current (ma) f tau , current gain bandwidth product (mhz) 0.1 1.0 10 100 v ce = ? 2 v t a = 25 c 100 10 1000 figure 8. safe operating area 1000 v ce , collector emitter voltage (v) i c , collector current (ma) 1.0 10 100 10 ms 100 ms 1 ms thermal limit single pulse test at t a = 25 c 100 10 1 l2sa2029qm3t5g,l2sa2029rm3t5g rev.o 4/5
sot?723 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 soldering footprint* dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ?y? ?x? x 0.08 (0.0032) y 2x e 1 2 3 style 1: pin 1. base 2. emitter 3. collector leshan radio company, ltd. l2sa2029qm3t5g,l2sa2029rm3t5g rev.o 5/5
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